Enhanced Field-Emission Performances by Graphene Modified ZnO Nanorods

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Published Sep 14, 2021
Yen-Lin Chu Yu-Jhih Chu Du-Yi Cai Tung-Te Chu Sheng-Joue Young

Abstract

This paper investigated that the preparation of zinc oxide (ZnO) nanorod (NR) and ZnO NR with graphene material was successfully prepared and explored. The ZnO NRs without and with decorated graphene are also called ZO and ZO-G field-emission (FE) emitters. Besides, the material properties of fabricated ZO and ZO-G NR arrays were characterized by X-ray diffraction (XRD) spectrometer, X-ray photoelectron spectroscopy (XPS), field-emission scanning electron microscope (FE-SEM), Raman spectrometer, and high-resolution transmission electron microscope (HR-TEM) with energy dispersive X-ray (EDX) spectrometer. It was observed that all NRs exhibited the single crystal performance and were uniformly grown on the surface of seed layer. Simultaneously, the samples were victoriously decorated by graphene on the NR surface. As a result, decorating with graphene reduced turn-on field from 6.06 to 4.12 V/μm, as shown in Figure1. The results indicated that these emitters will be useful in FE applications.

How to Cite

Chu, Y.-L., Chu, Y.-J., Cai, D.-Y., Chu, T.-T., & Young, S.-J. (2021). Enhanced Field-Emission Performances by Graphene Modified ZnO Nanorods. SPAST Abstracts, 1(01). Retrieved from https://spast.org/techrep/article/view/335
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References
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Section
GE1- Electronics

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